RODIY (RH) BILAN LEGIRLANGAN KREMNIYDA ZARYAD TASHUVCHILARNING SOCHILISH MEXANIZMLARI VA ELEKTROFIZIK XOSSALARI TADQIQI

Boboyev Akramjon Yo‘ldoshboyevich

Arxiv / №6 · 2026 / Maqola

RODIY (RH) BILAN LEGIRLANGAN KREMNIYDA ZARYAD TASHUVCHILARNING SOCHILISH MEXANIZMLARI VA ELEKTROFIZIK XOSSALARI TADQIQI

Annotatsiya

O'ZBEKCHA

Ushbu maqolada bor bilan legirlangan neytron-transmutatsion kremniyga rodiy atom-lari kiritilganda elektrofizik xossalar va zaryad tashuvchilar sochilishi o‘rganildi. Rh diffuziyasi qo‘shim-cha energetik sathlar, kompensatsiya jarayonlari va harakatchanlik o‘zgarishlarini yuzaga keltirishi aniq-landi

Kalit so'zlar: rodiy bilan legirlangan kremniy, neytron transmutatsion legirlangan kremniy, bor bilan legirlash, zaryad tashuvchilar.

РУССКИЙ

В статье исследованы электрофизические свойства и механизмы рассеяния но-сителей заряда в нейтронно-трансмутационно легированном бором кремнии при введении атомов родия. Установлено, что диффузия Rh формирует дополнительные энергетические уровни, вызы-вает компенсационные процессы и изменяет подвижность носителей.

Ключевые слова: кремний, легированный родием, нейтронно-трансмутационно легирован-ный кремний, борное легирование.

ENGLISH

This paper investigates electrophysical properties and charge-carrier scattering mechanisms in boron-doped neutron-transmutation silicon after rhodium incorporation. Rh diffusion was found to form additional energy levels, induce compensation processes, and change carrier mobility, which is important for controlling silicon materials.

Keywords: Rhodium-doped silicon, neutron transmutation doped silicon, boron doping, charge carriers.

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Foydalanilgan adabiyotlar

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Yang G., Wu K., Liu J. et al. Enhanced low-neutron-flux sensitivity effect in boron-doped silicon // Nanomaterials (Basel). 2020, vol. 10, № 5, Art. 886. DOI: 10.3390/nano10050886.
Nitescu A., Besleaga C., Nemnes G.A., Pintilie I. Bistable Boron-Related Defect Associated with the Acceptor Removal Process in Irradiated p-Type Silicon–Electronic Properties of Configurational Transformations // Sensors. 2023, vol. 23, № 12, Art. 5725. DOI: 10.3390/s23125725.
Himmerlich A., Castello-Mor N., Curras Rivera E. et al. Defect characterization studies on neutron irradiated boron-doped silicon pad diodes and low gain avalanche detectors. Preprint posted online September 15, 2022. DOI: 10.48550/arXiv.2209.07186.
Emtsev V.V., Abrosimov N.V., Kozlovski V.V., et al. Boron-doped silicon: a possible way of testing and refining models of non-ionizing energy loss under electron- and proton irradiation. Physics of the Solid State. 2022, vol. 64, № 12, p. 2063–2067. DOI: 10.21883/PSS.2022.12.54380.469.
Pagava T., Chkhartishvili L., Maisuradze N. et al. Role of boron in formation of secondary radiation defects in silicon. East European Journal of Enterprise Technologies. 2015, vol. 4, № 5, p. 52–58. DOI: 10.15587/1729-4061.2015.48007.
Najjar M., Dridi Rezgui B., Bouaicha M. et al. Local activation of light-induced degradation in co-doped boron-phosphorus silicon: evidence of defect diffusion phenomena. Materials Science in Semiconductor Processing. 2021, vol. 135. Art. 106104. DOI: 10.1016/j.mssp.2021.106104.
Saeedi K., Stavrias N., Redlich B. et al. Short lifetime components in the relaxation of boron acceptors in silicon. Physical Review B. 2018, vol. 97, № 12. Art. 125205. DOI: 10.1103/PhysRevB.97.125205.
Libal J., Novaglia S., Acciarri M. et al. Effect of compensation and of metallic impurities on the electrical properties of Cz-grown solar grade silicon. Journal of Applied Physics. 2008, vol. 104, № 10. Art. 104507. DOI: 10.1063/1.3021300.
Utamuradova S., Rakhmanov D., Doroshkevich A. et al. Impedance spectra of rhodium-doped silicon irradiated with alpha particles. SSRN Electronic Journal. Published online 2024. DOI: 10.2139/ssrn.6097790.

← Songa qaytish

[1] Kilic A. Analysis of astrophysical 30Si (n, γ)31Si reaction via the asymptotic normalization coefficient method. JETP Letters. 2025, vol. 122, № 1, p. 1–8. DOI: 10.1134/S0021364025605883.

[2] Yang G., Wu K., Liu J. et al. Enhanced low-neutron-flux sensitivity effect in boron-doped silicon // Nanomaterials (Basel). 2020, vol. 10, № 5, Art. 886. DOI: 10.3390/nano10050886.

[3] Nitescu A., Besleaga C., Nemnes G.A., Pintilie I. Bistable Boron-Related Defect Associated with the Acceptor Removal Process in Irradiated p-Type Silicon–Electronic Properties of Configurational Transformations // Sensors. 2023, vol. 23, № 12, Art. 5725. DOI: 10.3390/s23125725.

[4] Himmerlich A., Castello-Mor N., Curras Rivera E. et al. Defect characterization studies on neutron irradiated boron-doped silicon pad diodes and low gain avalanche detectors. Preprint posted online September 15, 2022. DOI: 10.48550/arXiv.2209.07186.

[5] Emtsev V.V., Abrosimov N.V., Kozlovski V.V., et al. Boron-doped silicon: a possible way of testing and refining models of non-ionizing energy loss under electron- and proton irradiation. Physics of the Solid State. 2022, vol. 64, № 12, p. 2063–2067. DOI: 10.21883/PSS.2022.12.54380.469.

[6] Pagava T., Chkhartishvili L., Maisuradze N. et al. Role of boron in formation of secondary radiation defects in silicon. East European Journal of Enterprise Technologies. 2015, vol. 4, № 5, p. 52–58. DOI: 10.15587/1729-4061.2015.48007.

[7] Najjar M., Dridi Rezgui B., Bouaicha M. et al. Local activation of light-induced degradation in co-doped boron-phosphorus silicon: evidence of defect diffusion phenomena. Materials Science in Semiconductor Processing. 2021, vol. 135. Art. 106104. DOI: 10.1016/j.mssp.2021.106104.

[8] Saeedi K., Stavrias N., Redlich B. et al. Short lifetime components in the relaxation of boron acceptors in silicon. Physical Review B. 2018, vol. 97, № 12. Art. 125205. DOI: 10.1103/PhysRevB.97.125205.

[9] Libal J., Novaglia S., Acciarri M. et al. Effect of compensation and of metallic impurities on the electrical properties of Cz-grown solar grade silicon. Journal of Applied Physics. 2008, vol. 104, № 10. Art. 104507. DOI: 10.1063/1.3021300.

[10] Utamuradova S., Rakhmanov D., Doroshkevich A. et al. Impedance spectra of rhodium-doped silicon irradiated with alpha particles. SSRN Electronic Journal. Published online 2024. DOI: 10.2139/ssrn.6097790.